Materials, Vol. 18, Pages 761: Improving Reliability of 1 Selector-1 ReRAM Crossbar Arrays Through Hybrid Switching Methods

Materials, Vol. 18, Pages 761: Improving Reliability of 1 Selector-1 ReRAM Crossbar Arrays Through Hybrid Switching Methods

Materials, Vol. 18, Pages 761: Improving Reliability of 1 Selector-1 ReRAM Crossbar Arrays Through Hybrid Switching Methods

Materials doi: 10.3390/ma18040761

Authors:
Hyun Kyu Seo
Min Kyu Yang

In this study, an innovative switching approach is explored to improve the reliability of 1 Selector-1 ReRAM (1S1R) devices, integrated into a 4K crossbar array (CBA). The key innovation is the use of DC sweeping for set operations and AC single-pulse resetting to minimize device stress and prevent breakdown. The selector, based on a GeSeTe ovonic threshold switching (OTS) element, demonstrated excellent endurance (>1012 cycles), fast switching (<100 ns), and high device-to-device uniformity (<5% variability). The ReRAM, constructed with Pt/LiNbOx/W, exhibited robust bipolar resistive switching, multi-bit capability, and endurance exceeding 1012 cycles. The integrated 1S1R CBA demonstrated reliable retention and low variability in operation, showing potential for high-performance, high-density memory applications.

February 9, 2025 at 10:05AM
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Hyun Kyu Seo